发明名称 SOLID-STATE IMAGING DEVICE APPLIED TO CMOS IMAGE SENSOR
摘要 According to one embodiment, a solid-state imaging device includes a pixel array, two signal lines and a row scanning circuit. The row scanning circuit simultaneously renders conductive, by the first read-out row scanning circuit and the second read-out row scanning circuit, the two transfer transistors, which are connected to two photoelectric conversion elements do not share a floating diffusion portion neighboring in the column direction, thereby reading out signals in parallel from the photoelectric conversion elements of the pixels of two rows of an odd-numbered row and an even-numbered row.
申请公布号 US2011221941(A1) 申请公布日期 2011.09.15
申请号 US20100980852 申请日期 2010.12.29
申请人 发明人 SATO MAKI
分类号 H04N5/335 主分类号 H04N5/335
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