发明名称 |
Reducing Resistance in Source and Drain Regions of FinFETs |
摘要 |
A semiconductor structure includes a semiconductor fin on a top surface of a substrate, wherein the semiconductor fin includes a middle section having a first width; and a first and a second end section connected to opposite ends of the middle section, wherein the first and the second end sections each comprises at least a top portion having a second width greater than the first width. The semiconductor structure further includes a gate dielectric layer on a top surface and sidewalls of the middle section of the semiconductor fin; and a gate electrode on the gate dielectric layer. |
申请公布号 |
US2011223735(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
US201113103594 |
申请日期 |
2011.05.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU CHEN-HUA;HSU YU-RUNG;YEH CHEN-NAN;CHANG CHENG-HUNG |
分类号 |
H01L21/336;H01L21/20 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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