发明名称 Gas barrier film, film deposition method and film deposition device
摘要 <p>A gas barrier film comprises: a base film; and a silicon nitride layer deposited on a surface of the base film, wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is higher than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.</p>
申请公布号 EP2365105(A1) 申请公布日期 2011.09.14
申请号 EP20110156750 申请日期 2011.03.03
申请人 FUJIFILM CORPORATION 发明人 MOCHIZUKI, YOSHIHIKO;NISHIDA, HIROYUKI
分类号 C23C16/54;B32B7/02;C23C16/34;C23C16/455 主分类号 C23C16/54
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