发明名称 |
Gas barrier film, film deposition method and film deposition device |
摘要 |
<p>A gas barrier film comprises: a base film; and a silicon nitride layer deposited on a surface of the base film, wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is higher than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.</p> |
申请公布号 |
EP2365105(A1) |
申请公布日期 |
2011.09.14 |
申请号 |
EP20110156750 |
申请日期 |
2011.03.03 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
MOCHIZUKI, YOSHIHIKO;NISHIDA, HIROYUKI |
分类号 |
C23C16/54;B32B7/02;C23C16/34;C23C16/455 |
主分类号 |
C23C16/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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