| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a sense amplifier capable of operating at high speed applicable also to a memory cell capable of operating at high speed. SOLUTION: In the semiconductor memory device having the sense amplifier, the sense amplifier includes: a read bit line and a write bit line performing data transmission to/from a memory cell; a data line performing data transmission to/from an input/output circuit; an inverter circuit using the read bit line as input; a data reading means transmitting output of the inverter circuit to the data line; a first data writing means transmitting data from the data line to the read bit line by a writing enable signal; and a second data writing means transmitting data from the data line to the write bit line by reversing the data by a reverse writing enable signal. COPYRIGHT: (C)2011,JPO&INPIT
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