PROCESS FOR PRODUCING WAFER OF SILICON CARBIDE SINGLE-CRYSTAL

摘要

A process for manufacturing a wafer of a silicon carbide single crystal having: cutting a wafer from an ± (hexagonal) -silicon carbide single crystal so that the off-angle is totally in the range from 0.4 to 2° to a plane obtained in perpendicular to the [0001] c axis of the silicon carbide single crystal; disposing the wafer in a reaction vessel; feeding a silicon source gas and carbon source gas in the reaction vessel; and epitaxially growing the ± (hexagonal) silicon carbide single crystal on the wafer by allowing the silicon source gas and carbon source gas to react.