Semiconductor device and power conversion apparatus using the same

摘要

A semiconductor device provides a gate electrode (401) formed on a lateral face of a wide trench (423), and thereby cover the gate electrode is covered by a gate insulating layer (402) and a thick insulating layer (403) to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise can be achieved.