| 摘要 |
A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location has a first cross-sectional width. The second electrode contacts the storage location and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode form a pillar phase change memory cell.
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