DEVICE AND METHOD FOR THE ION BEAM MODIFICATION OF A SEMICONDUCTOR SUBSTRATE

摘要

The invention relates to a device for the ion beam modification or ion implantation in a semiconductor substrate (2), comprising at least one micro-ion emitter (1) of at least one field emission array (3, 4) that is directed at the semiconductor substrate, can be focused and generates an ion beam (1a), said array comprising an ion emitter (3) having an ion reservoir (4) on a first electric potential, an extractor (5) and/or an electrostatic lens (6) on a second electric potential, and a post acceleration unit (7) on a third electric potential. According to the method, the semiconductor substrate is subjected to directed ion beams from an implantation array composed of field emission micro-ion emitters and a lateral modification profile and/or a modification profile that is location-dependent with respect to the depth thereof is generated by a controlled actuation of the field emission micro-ion emitters in the semiconductor substrate.