SEMICONDUCTOR DEVICE HAVING DOPED EPITAXIAL REGION AND ITS METHODS OF FABRICATION
摘要
<p>Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.</p>
申请公布号
WO2011084262(A3)
申请公布日期
2011.09.09
申请号
WO2010US58199
申请日期
2010.11.29
申请人
INTEL CORPORATION;MURTHY, ANAND S.;AUBERTINE, DANIEL BOURNE;GHANI, TAHIR;PETHE, ABHIJIT JAYANT
发明人
MURTHY, ANAND S.;AUBERTINE, DANIEL BOURNE;GHANI, TAHIR;PETHE, ABHIJIT JAYANT