发明名称 METHOD AND APPARATUS FOR TESTING A MEMORY DEVICE
摘要 <p>In a particular embodiment, a method includes receiving a testing activation signal (134) at a controller (108) coupled to a semiconductor device (104). The method further includes biasing a well (142) of at least one transistor of the semiconductor device in response to the received testing activation signal. The bias is provided by a biasing circuit (106) that is responsive to the controller. While the well is biased, a test of the semiconductor device is performed to generate testing data.</p>
申请公布号 WO2011109487(A1) 申请公布日期 2011.09.09
申请号 WO2011US26826 申请日期 2011.03.02
申请人 QUALCOMM INCORPORATED;MOHAMMAD, BAKER S.;KIM, HONG S.;BASSETT, PAUL DOUGLAS 发明人 MOHAMMAD, BAKER S.;KIM, HONG S.;BASSETT, PAUL DOUGLAS
分类号 G11C11/412;G11C29/12;G11C29/50 主分类号 G11C11/412
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