METHOD OF PLANARIZING INTEGRATED CIRCUIT WAFER FOR IMPROVING UNIFORMITY

摘要

PURPOSE: A method of planarizing an IC(Integrated Circuit) wafer is provided to obtain the final structure uniformly planarized regardless of two region with different structure densities by performing blanket etching and block etching after forming a blanket conformal film. CONSTITUTION: A high density region and a low density region are simultaneously defined at a wafer(10) by forming two types of trenches in the wafer. Narrow trenches are formed within the high density region and wide trenches are formed within the low density region. A filling material layer(50) is formed thereon. At this time, the first structures with the first height and the second structures with the second height are formed on the high and low density regions, respectively. The second height is larger than the first height. A blanket conformal film(130) is formed on the resultant structure and planarized. Blanket etching is performed on the film. Block etching is performed on the high density region while the low density region is protected.