发明名称 |
HIGH VOLTAGE MOS TRANSISTOR |
摘要 |
A high voltage metal oxide semiconductor (HVMOS) transistor (1) comprises a drift region (8) comprising a material having a mobility which is higher than a mobility of Si. There is also provided a method of manufacturing said transistor, the method comprising forming a drift region comprising a material having a mobility which is higher than a mobility of Silicon. The material can be a Si-Ge strained material. The on- resistance is reduced compared to a transistor with a drift region made of Si, so that the trade-off between breakdown voltage and on-resistance is improved. |
申请公布号 |
WO2011107141(A1) |
申请公布日期 |
2011.09.09 |
申请号 |
WO2010EP52568 |
申请日期 |
2010.03.01 |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG;PAL, DEB KUMAR;KHO, ELIZABETH;HOELKE, ALEXANDER |
发明人 |
PAL, DEB KUMAR;KHO, ELIZABETH;HOELKE, ALEXANDER |
分类号 |
H01L29/78;H01L21/265;H01L21/336;H01L29/165 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|