发明名称 |
METHOD FOR MANUFACTURING SOI SUBSTRATE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce manufacturing cost of an SOI substrate or to improve yield of the SOI substrate. <P>SOLUTION: A method for manufacturing an SOI substrate includes the steps of irradiating a single crystal semiconductor substrate with ions to form an embrittled region in the single crystal semiconductor substrate, bonding the single crystal semiconductor substrate to a base substrate with an insulating film therebetween, and separating the single crystal semiconductor substrate and the base substrate at the embrittled region to form a semiconductor layer over the base substrate with the insulating film therebetween. In the step of forming the embrittled region, ion species which are not mass-separated are used as the ions and a temperature of the single crystal semiconductor substrate is set to 250°C or higher during irradiation with the ions. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011176295(A) |
申请公布日期 |
2011.09.08 |
申请号 |
JP20110012635 |
申请日期 |
2011.01.25 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
HIZUKA JUNICHI;ONUMA HIDETO |
分类号 |
H01L27/12;H01L21/02;H01L21/265;H01L21/336;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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