In-Ga-Sn-BASED OXIDE SINTERED COMPACT, TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor film suitable for a patterning step upon the production of a semiconductor element, and to provide an oxide sintered compact allowing the semiconductor film to be deposited.

SOLUTION: The oxide sintered compact contains an indium element (In), a gallium element (Ga) and a tin element (Sn)in the atomic ratios of the following expressions (1) to (3): 0.10≤In/(In+Ga+Sn)≤0.60 (1), 0.10≤Ga/(In+Ga+Sn)≤0.55 (2), and 0.0001COPYRIGHT: (C)2011,JPO&INPIT