| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element for eliminating an influence by a parasitic element comprising a drift region, a base region, and a source/emitter region, and preventing an increase in an on voltage. SOLUTION: A trench 3 penetrating the base region and reaching a drift region 1 is formed on a front surface of a semiconductor substrate. Then, a gate electrode 5 is embedded within the trench 3 via a gate insulation film 4 so that height equal to that of the surface of the base region 2 is not reached, and a second recess is thereby formed. Then, an interlayer insulation film 7 is formed while being embedded into the second recess. Then, etch back is performed and the interlayer insulation film 7 is allowed to remain only on the surface of the gate electrode 5. Then, a surface layer of the base region 2 is removed until the surface of the base region 2 becomes lower than the interface between the gate electrode 5 and the interlayer insulation film 7 by etching to form a first recess 6. Then, a source electrode 8 is embedded into the first recess 6. COPYRIGHT: (C)2011,JPO&INPIT |
