| 摘要 |
PROBLEM TO BE SOLVED: To achieve both reduction in Schottky barrier height and reduction in leakage current. SOLUTION: An interface layer comprising SiC<SB>X</SB>is not formed on an interface between a Schottky electrode 4 and SiC, and respective particles of metal forming the Schottky electrode 4 are made to be in a state of lattice matching such that an atom arrangement is continuous, on a surface of the SiC. Specifically, a particle structure of the metal forming the Schottky electrode 4 is not made to be a columnar structure but is made to be a granular structure, and oxygen is made to be hardly taken in the interface through interfaces between the particles as compared with the columnar structure so that SiO<SB>X</SB>is not formed, thereby the lattice matching between the metal forming the Schottky electrode 4 and the SiC is achieved. COPYRIGHT: (C)2011,JPO&INPIT |
