| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging device, capable of easily manufacturing the thin-type solid-state imaging device on a wafer level. <P>SOLUTION: The method of manufacturing the solid-state imaging device includes the steps of: bonding a support substrate 12 onto a cover glass substrate 10; mechanically polishing a surface opposite to the support substrate 12 of the cover glass substrate 10; removing part of the support substrate 12; forming a plurality of frame-shaped spacers 14 on the cover glass substrate 10; thinning the cover glass substrate 10 by wet etching up to a predetermined thickness; sticking the cover glass substrate 10 and a silicon wafer 18 on which a solid-state image pickup element 20 is formed through the spacers 14; and dicing the cover glass substrate 10 and then dicing the silicon wafer 18. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
