发明名称 |
Semiconductor Device and Method of Forming Wafer Level Multi-Row Etched Lead Package |
摘要 |
A semiconductor device has a base carrier having first and second opposing surfaces. The first surface of the base carrier is etched to form a plurality of cavities and multiple rows of base leads between the cavities extending between the first and second surfaces. A second conductive layer is formed over the second surface of the base carrier. A semiconductor die is mounted within a cavity of the base carrier. A first insulating layer is formed over the die and first surface of the base carrier and into the cavities. A first conductive layer is formed over the first insulating layer and first surface of the base carrier. A second insulating layer is formed over the first insulating layer and first conductive layer. A portion of the second surface of the base carrier is removed to expose the first insulating layer and electrically isolate the base leads. |
申请公布号 |
US2011215449(A1) |
申请公布日期 |
2011.09.08 |
申请号 |
US20100719476 |
申请日期 |
2010.03.08 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
CAMACHO ZIGMUND R.;MERILO DIOSCORO A.;BATHAN HENRY D.;ESPIRITU EMMANUEL A. |
分类号 |
H01L25/11;H01L21/56;H01L23/28 |
主分类号 |
H01L25/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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