发明名称 Semiconductor Device and Method of Forming Wafer Level Multi-Row Etched Lead Package
摘要 A semiconductor device has a base carrier having first and second opposing surfaces. The first surface of the base carrier is etched to form a plurality of cavities and multiple rows of base leads between the cavities extending between the first and second surfaces. A second conductive layer is formed over the second surface of the base carrier. A semiconductor die is mounted within a cavity of the base carrier. A first insulating layer is formed over the die and first surface of the base carrier and into the cavities. A first conductive layer is formed over the first insulating layer and first surface of the base carrier. A second insulating layer is formed over the first insulating layer and first conductive layer. A portion of the second surface of the base carrier is removed to expose the first insulating layer and electrically isolate the base leads.
申请公布号 US2011215449(A1) 申请公布日期 2011.09.08
申请号 US20100719476 申请日期 2010.03.08
申请人 STATS CHIPPAC, LTD. 发明人 CAMACHO ZIGMUND R.;MERILO DIOSCORO A.;BATHAN HENRY D.;ESPIRITU EMMANUEL A.
分类号 H01L25/11;H01L21/56;H01L23/28 主分类号 H01L25/11
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