| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus which can suppress damages to a laser element when wire bonding and can suppress increase in the planar size. SOLUTION: The semiconductor laser apparatus 40 includes a first semiconductor laser device 10, having a first surface formed of a flat part 1a and a second conductivity-side electrode 5 and a second surface formed of a first conductivity-type semiconductor layer 1; a second semiconductor laser device 20, having a third surface formed of a second conductivity-side electrode 25 and a fourth surface formed of a first conductive type semiconductor layer 21; and a support substrate 30. A portion of the first surface of the first semiconductor laser element 10 overlaps on the fourth surface; the support substrate 30 includes vias 35, 36 which penetrate through the support substrate 30 from an upper surface 30a toward a lower surface 30b and in which conductive members 37 are filled; and the second conductivity-side electrode 5 and second conductivity-side electrode 25 are respectively connected to the conductive members 37 of the vias 35, 36. COPYRIGHT: (C)2011,JPO&INPIT
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