| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain higher sensitivity, even if a photodiode is operated by a lower bias voltage. <P>SOLUTION: This photodiode is equipped with a field control layer 104 composed of a first conductivity type semiconductor formed on an electron transit layer 103. A first semiconductor layer 102, the electron transit layer 103, the field control layer 104 and a second semiconductor layer 107 are composed of a semiconductor with greater band gap energy than that of a semiconductor that constitutes an optical absorption layer 105. The impurity concentration of the electron transit layer 103 and the optical absorption layer 105 is lower than those of the first semiconductor layer 102, the field control layer 104 and the second semiconductor layer 107. <P>COPYRIGHT: (C)2011,JPO&INPIT |
