SRAM MEMORY CELL BASED ON DOUBLE-GATE TRANSISTORS, PROVIDED WITH MEANS FOR IMPROVING THE WRITE MARGIN,申请号EP20090712534-传众专利搜索

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发明名称	SRAM MEMORY CELL BASED ON DOUBLE-GATE TRANSISTORS, PROVIDED WITH MEANS FOR IMPROVING THE WRITE MARGIN
摘要
申请公布号	EP2245632(B1)	申请公布日期	2011.09.07
申请号	EP20090712534	申请日期	2009.02.16
申请人	COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES	发明人	THOMAS, OLIVIER;GIRAUD, BASTIEN
分类号	G11C11/412;G11C11/419	主分类号	G11C11/412
代理机构		代理人
主权项
地址

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