发明名称 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon
摘要 A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (CoxFe(100-X))(100-y)Siy where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 20 and 30.
申请公布号 US8014109(B2) 申请公布日期 2011.09.06
申请号 US20070867063 申请日期 2007.10.04
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 CAREY MATTHEW J.;CHILDRESS JEFFREY R.;MAAT STEFAN
分类号 G11B5/33 主分类号 G11B5/33
代理机构 代理人
主权项
地址