| 摘要 |
According to a method of manufacturing a semiconductor device, a short-circuit wiring is formed in a region on a wafer including a dicing region, and electrode pads for input and output signals of a plurality of devices disposed in a semiconductor device forming region are electrically short-circuited by the short-circuit wiring, so that occurrence of plasma damage is suppressed even if the wafer is subjected to various plasma processes. When the wafer subjected to the plasma processes is cut along the dicing region to separate a semiconductor device, the electrical short-circuit of the electrode pads by the short-circuit wiring is released, so that the functionally unwanted short-circuit of the devices or the like is appropriately released.
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