| 摘要 |
A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas.
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