发明名称 |
Semiconductor integrated circuit |
摘要 |
The invention provides a semiconductor integrated circuit preventing an electrostatic breakdown due to a surge voltage applied to a power supply wiring or a ground wiring and preventing noise interference between a digital circuit and an analog circuit. By providing a first electrostatic breakdown protection diode and a first electrostatic breakdown protection bipolar transistor in a first island region, the first electrostatic breakdown protection diode and the first electrostatic breakdown protection bipolar transistor turn on when a surge voltage is applied to a first ground wiring and protect a digital circuit against an electrostatic breakdown. Furthermore, a first isolation layer is contacted with the first ground wiring in a position that is more adjacent to a first ground pad than the digital circuit, and a second isolation layer is contacted with a second ground wiring in a position that is more adjacent to a second ground pad than an analog circuit. This prevents noise interference between the digital circuit and the analog circuit.
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申请公布号 |
US8014114(B2) |
申请公布日期 |
2011.09.06 |
申请号 |
US20080268709 |
申请日期 |
2008.11.11 |
申请人 |
SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. |
发明人 |
SHIMAMURA TETSUO |
分类号 |
H02H9/00;H02H1/00;H02H1/04;H02H3/22 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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