| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist composition increasing a dissolution contrast in organic solvent development, and a pattern forming method for forming a hole pattern by positive-negative reversal using a mask wherein a grid pattern is arranged for forming the hole pattern by single exposure and development particularly. <P>SOLUTION: A pattern is formed by applying a resist composition comprising a polymer compound, which contains repeating units having an acid labile group-substituted/unsubstituted naphthol group, an acid generator, and an organic solvent onto a substrate; exposing a resist film with high-energy radiation after heating treatment; dissolving an unexposed region by using a developer based on an organic solvent after the heating treatment to obtain a negative pattern wherein the exposed region is not dissolved. In the process of image formation via positive/negative reversal by the organic solvent development, the photoresist film containing the polymer compound including the repeating units and the acid generator has high dissolution contrast since solubility in the unexposed region is high while that in the exposed region is low, and reduces acid diffusion. When exposure and development are carried out by using the photoresist film and the grid pattern mask, a fine hole pattern can be formed with high dimensional control. When a protective film having an amino group or an amine salt is used further, opening defects of the hole pattern is prevented, and dimension uniformity can be improved. <P>COPYRIGHT: (C)2011,JPO&INPIT |
