| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth method for satisfactorily maintaining crystallinity, and further, increasing the area of the crystals to be grown, and to provide a crystal substrate and a semiconductor device. SOLUTION: The crystal growth method includes: an arrangement step of shifting a plurality of seed substrates 10 to the sides of the side parts 11 of the seed substrates 10 in such a manner that the faces to be grown in the seed substrates 10 become the ä001} faces; and a growth step of growing Al<SB>x</SB>In<SB>y</SB>Ga<SB>(1-x-y)</SB>N(0≤x≤1, 0≤y≤1, x+y≤1) crystals 20 on the respective surfaces 12 of a plurality of the seed substrates 10 by hydride vapor phase epitaxy. Then, in the growth step, the respective crystals 20 are grown at >1,100 and < 1,300°C in such a manner that the respective crystals 20 grown on the respective surfaces 12 of a plurality of the seed substrates 10 are integrated. COPYRIGHT: (C)2011,JPO&INPIT
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