发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To solve such a problem of a conventional semiconductor device that since a side face or a rear face of a semiconductor substrate is not covered with a resin layer, an edge of the semiconductor substrate is likely to chip, so that the semiconductor device is not suitable for light shielding or moisture resistance. SOLUTION: In the semiconductor device 1, wiring layers 13 and 19 are formed on a surface side of a semiconductor layer 11, and a resin layer 8 is formed to cover the wiring layers 13 and 19. A resin layer 9 is also formed to cover a rear face side of the semiconductor layer 11. A groove 28 formed from the surface side of the semiconductor layer 11 is filled with the resin layer 8, and a groove 29 formed from the rear face side of the semiconductor layer 11 is filled with the resin layer 9. This structure achieves a package structure excellent in light shielding effects wherein the semiconductor layer 11 is not exposed from the semiconductor device 1, and the semiconductor layer 11 is hard to be chipped. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011171644(A) 申请公布日期 2011.09.01
申请号 JP20100035965 申请日期 2010.02.22
申请人 ON SEMICONDUCTOR TRADING LTD 发明人 IKEDA DAISUKE;AMATATSU YOSHIMASA
分类号 H01L23/12;H01L21/301;H01L23/29;H01L23/31 主分类号 H01L23/12
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