发明名称 METHOD FOR STRESS-ADJUSTED OPERATION OF A PROJECTION EXPOSURE SYSTEM AND CORRESPONDING PROJECTION EXPOSURE SYSTEM
摘要 The present invention relates to a projection exposure system and a method for operating a projection exposure system for microlithography with an illumination system which has at least one variably adjustable pupil-defining element (4), wherein the illumination stress of at least one optical element of the projection exposure system is determined automatically in the case of an adjustment of the at least one variably adjustable pupil-defining element and, from the automatically determined illumination stress, the maximum radiant power of the light source is set or determined and/or in which an illumination system is provided with which different illumination settings can be made, wherein the usage of the projection exposure system is recorded and, from the history of the usage, at least one state parameter of at least one optical element of the projection exposure system is determined.
申请公布号 WO2011104389(A2) 申请公布日期 2011.09.01
申请号 WO2011EP52953 申请日期 2011.02.28
申请人 CARL ZEISS SMT GMBH;KNEER, BERNHARD;DEGUENTHER, MARKUS;GRUNER, TORALF 发明人 KNEER, BERNHARD;DEGUENTHER, MARKUS;GRUNER, TORALF
分类号 G03F7/20 主分类号 G03F7/20
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