| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device improved in a yield by preventing generation of a resist residue, and to provide a method of manufacturing the same. <P>SOLUTION: This semiconductor device includes: rewiring 19 formed on the upper surface of a semiconductor device wafer 10; columnar electrodes 21 formed on lands of the rewiring 19; first thermoplastic resin layer 41 covering the rewiring 19; and a filler-containing thermoplastic resin layer 42 covering the first thermoplastic resin layer, covering upper side faces of the columnar electrodes 21, and exposing the upper surfaces of the columnar electrodes 21. A film composed of a three-layer structure of the first thermoplastic resin layer, the filler-containing thermoplastic resin layer and a second thermoplastic resin layer is heated, pressed and stuck in a pressure-reduced environment, and thereafter the second thermoplastic resin layer is removed. Since a resist peeling process does not exist, generation of the resist residue can be prevented. By sticking the first thermoplastic resin layer on wires to be heated, the first thermoplastic resin layer is softened and sunk, and thereby spread between the wires so that the wires can be tightly covered. <P>COPYRIGHT: (C)2011,JPO&INPIT |
