| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. <P>SOLUTION: The piezoelectric thin film element 1 includes a substrate 10, and a piezoelectric thin film 40 which is arranged on the substrate 10, has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≤x≤1, 0≤y≤1, 0≤z≤0.2, x+y+z=1) and selected from a group consisting of a pseudo-cubic crystal, a hexagonal crystal and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass. <P>COPYRIGHT: (C)2011,JPO&INPIT |
