| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CVD apparatus which can suppress the deterioration of film quality caused by a low-temperature feed gas. <P>SOLUTION: The CVD apparatus includes a chamber, an anode electrode which is placed in the chamber, bears a substrate placed thereon, and has a substrate heater that raises the temperature of the substrate placed on the anode electrode, and a cathode unit which is located to be opposite to the anode electrode and has a cathode electrode having a gas supply outlet for supplying a feed gas into the chamber. The cathode unit is provided with a channel control plate set closer to the anode electrode. The channel control plate has a shield portion which suppresses a flow of the feed gas delivered out of the gas supply outlet toward the anode electrode, and gas circulation holes which is opened while communicating with the cathode electrode side and the anode electrode side. <P>COPYRIGHT: (C)2011,JPO&INPIT |
