| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve an operation margin and attain high-speed reading when sense amplifiers are distributed in a large memory cell array block. <P>SOLUTION: The semiconductor storage device includes: a memory cell array having a plurality of memory cells; a sense amplifier disposed adjacent to the memory cell array and configured to amplify signals which have been read from the corresponding memory cell; read signal lines; a plurality of connection circuits for selectively connecting the sense amplifier and the read signal line; a plurality of main amplifiers for amplifying and outputting signals which have been read from the sense amplifier by the connection circuit selected based on a selection signal via the read signal line; start signal lines connected to the main amplifiers; and a start signal generation circuit for outputting a start signal of the main amplifier to the start signal line. The start signal generation circuit is disposed close to the connection circuit. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
