| 摘要 |
<p>The method for uniformly coating the substrates with metallic back contacts by depositing vaporized evaporation products (6) made of metallic materials in a process chamber of a continuous coating system (1) and an annealing process to compensate local and material-related deviations of a predetermined temperature-time profile of the substrate during the coating, comprises carrying out the annealing process during the coating process where an uniform coating of the substrate takes place independent of the localization and the material properties of the substrate. The method for uniformly coating the substrates with metallic back contacts by depositing vaporized evaporation products (6) made of metallic materials in a process chamber of a continuous coating system (1) and an annealing process to compensate local and material-related deviations of a predetermined temperature-time profile of the substrate during the coating, comprises carrying out the annealing process during the coating process where an uniform coating of the substrate takes place independent of the localization and the material properties of the substrate. The annealing process takes place by using secondary processes of the coating processes, by which a targeted substrate heating is carried out, where a homogeneous layer thickness cross distribution and a defined temperature-time regime are adjusted over the width of the coating areas for the continuous substrate. A coating rate distribution control and a temperature distribution control are carried out by a targeted temperature guidance of an evaporating device (2). The targeted temperature guidance of the evaporating device takes place using an electron beam evaporator. The heating elements, which are arranged in the process chamber, are made of materials line evaporation product and are different from the evaporation material, are impacted by an electron beam. The coating takes place by evaporator shuttle or directly heated evaporator crucible and the hot steam is produced by the evaporator shuttle or directly heated evaporator crucible on the substrate during the coating process, where the evaporator shuttle or directly heated evaporator crucible is operated without or with low rates and has a high emission coefficient of the shuttle materials or crucible materials. The hot stream adjusted with the evaporating process is locally corrected by a further separate heating device during the coating process. A homogenization of the reached substrate temperature takes place in a substrate transport direction (11) by the further separate heating device, which produces the hot stream transverse to the substrate transport direction in a substrate width in a linear manner, where a determined power curve adapted to the properties of the substrate for each substrate is produced in the progression of the moving past to the heating device. The temperature measurements are performed at the substrate for adjusting the defined temperature-time regime using run-to-run control, where the measurement takes place before, during and/or after the coating. The temperature measurements take place over moving thermo-elements, radiation sensors, pyrometer, contactless resistance measurement or in-situ temperature measurements. An independent claim is included for a device for uniformly coating the substrates with metallic back contacts by depositing vaporized evaporation products made of metallic materials in a process chamber of a continuous coating system and an annealing process to compensate local and material-related deviations of a predetermined temperature-time profile of the substrate during the coating.</p> |
