| 摘要 |
Semiconductor integrated circuit apparatus capable of raising detection sensitivity of a leakage current detection circuit and improving response. A semiconductor integrated circuit apparatus has a substrate voltage control block that supplies a substrate voltage to an internal circuit and controls NchMOS transistor threshold voltage of the internal circuit, and a leakage current detection circuit constituted by a leakage current detection NchMOS transistor supplied with a high potential side supply voltage to a drain, that has a source connected to a constant current source, and that is applied with an arbitrary stabilizing potential to a gate in such a manner that the substrate voltage is controlled by the substrate voltage control block, and a comparator comparing the source potential of the leakage current detection NchMOS transistor and a predetermined reference potential. |
