| 摘要 |
<p>A method for manufacturing a photoelectric conversion device including a forming a semiconductor film by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.</p> |
