发明名称 |
Dopant implantation method using multi-step implants |
摘要 |
A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.
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申请公布号 |
US8008158(B2) |
申请公布日期 |
2011.08.30 |
申请号 |
US20080170656 |
申请日期 |
2008.07.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG TSE-EN;CHANG CHIH-FU;WU BONE-FONG;TING CHIEH CHIH;WANG SHAO HUA;CHEN PU-FANG;CHUANG YEN |
分类号 |
H01L21/336;H01L21/8236 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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