发明名称 |
Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof |
摘要 |
A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.
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申请公布号 |
US8008772(B2) |
申请公布日期 |
2011.08.30 |
申请号 |
US20080019789 |
申请日期 |
2008.01.25 |
申请人 |
HITACHI, LTD. |
发明人 |
MORITA TOSHIAKI;YASUDA YUSUKE;IDE EIICHI |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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