发明名称 |
High power and high temperature semiconductor power devices protected by non-uniform ballasted sources |
摘要 |
This invention discloses a semiconductor power device disposed on a semiconductor substrate supporting an epitaxial layer as a drift region composed of an epitaxial layer. The semiconductor power device further includes a super-junction structure includes a plurality of doped sidewall columns disposed in a multiple of epitaxial layers. The epitaxial layer have a plurality of trenches opened and filled with the multiple epitaxial layer therein with the doped columns disposed along sidewalls of the trenches disposed in the multiple of epitaxial layers. |
申请公布号 |
US8008747(B2) |
申请公布日期 |
2011.08.30 |
申请号 |
US20080074087 |
申请日期 |
2008.02.28 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD. |
发明人 |
HEBERT FRANCOIS;BHALLA ANUP |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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