CONSTANT-CURRENT DIODE ELEMENT AND MANUFACCTURING METHOD THEREOF

摘要

PURPOSE: A constant-current diode element and a manufacturing method thereof are provided to simplify a process by forming a gate region using a silicon etching process. CONSTITUTION: A scribe line region is defined on an epi layer(120) and the scribe line region is etched in the depth of the epi layer thickness. A gate region is formed by injecting the impurity of the same shape as a substrate in a part of the region of the epi layer. A source/drain region is formed on a part of the region of the epi layer by injecting the impurity of the same shape as the epi layer. A contact area is formed by dispersing impurities and coating an insulating layer in order to electrically isolate the impurity region. A metal layer(190) short-circuiting the source/drain region, the scribe line area and the gate region is formed. The insulating layer(200) is coated on the upper end of the metal layer and the insulating layer is formed in the pad area.