REDUCING PHOTORESIST LAYER DEGRADATION IN PLASMA IMMERSION ION IMPLANTATION
摘要
<p>A method, of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece,</p>
申请公布号
SG172763(A1)
申请公布日期
2011.08.29
申请号
SG20110043148
申请日期
2009.11.17
申请人
APPLIED MATERIALS, INC.
发明人
HILKENE, MARTIN, A.;SANTHANAM, KARTIK;TA, YEN, B.;PORSHNEV, PETER, I.;FOAD, MAJEED, A.