| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device smaller in size of a memory cell and larger in memory capacity than a conventional ferroelectric memory. <P>SOLUTION: A memory includes a first diffusion layer formed on a surface of a semiconductor substrate, a body region disposed on the first diffusion layer, a second diffusion layer disposed on the body region, a first gate insulating film including a ferroelectric film disposed on a first side face of the body region, a second gate insulating film including a ferroelectric film disposed on a second side face of the body region, a first gate electrode disposed on the first side face of the body region via the first gate insulating film, and a second gate electrode disposed on the second side face of the body region via the second gate insulating film. The first and second diffusion layers, the body region, the first and second gate insulating films and the first and second gate electrodes constitute the memory cell, and each memory cell stores a plurality of pieces of logical data depending on polarized states of the first and second gate insulating films. <P>COPYRIGHT: (C)2011,JPO&INPIT |
