发明名称 |
Semiconductor Device and Method of Forming IPD in Fan-Out Level Chip Scale Package |
摘要 |
A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.
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申请公布号 |
US2011204509(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US20100713018 |
申请日期 |
2010.02.25 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
LIN YAOJIAN;FRYE ROBERT C.;MARIMUTHU PANDI CHELVAM;LIU KAI |
分类号 |
H01L23/48;H01L21/50;H01L21/78 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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