| 摘要 |
PROBLEM TO BE SOLVED: To reduce the occurrence of end cracks in a group-III nitride semiconductor layer from the vicinity of the orientation flat, when the group-III nitride semiconductor layer is grown heteroepitaxially on a silicon substrate. SOLUTION: The silicon substrate having a (111) plane which has orientation flat, in a direction in which the <110> direction rotates counterclockwise about the rotation axis of the <111> direction by an angle ϕ of 30°, 90°, and 150° as a principal surface is used as the substrate for heteroepitaxial growth; and a buffer layer made of the group-III nitride semiconductor is formed. COPYRIGHT: (C)2011,JPO&INPIT |
