发明名称 |
Method Of Forming Pattern Structure And Method Of Fabricating Semiconductor Device Using The Same |
摘要 |
A method of forming a pattern structure and a method of fabricating a semiconductor device using the pattern structure, are provided the method of forming the pattern structure includes forming a mask on an underlying layer formed on a lower layer. The underlying layer is etched using the mask as an etching mask, thereby forming patterns on the lower layer. The patterns define at least one opening. A sacrificial layer is formed in the opening and the mask is removed. The sacrificial layer in the opening is partially etched when the mask is removed.
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申请公布号 |
US2011207285(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US201113029449 |
申请日期 |
2011.02.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG-IN;OH JAEHEE;SUH KISEOK |
分类号 |
H01L21/02;H01L21/027 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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