发明名称 MIRROR ELECTRON TYPE SAMPLE INSPECTION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a compact charged particle beam device capable of maintaining high vacuum even during emission of electron beams. SOLUTION: A non-evaporation getter pump is arranged at an upstream of an electron optical differential exhaust of the charged particle beam device, the minimum essential ion pump 118 is arranged downstream, and both are used in common. Furthermore, a removable coil is mounted on an electron gun part. With this, the compact charged particle beam device can be obtained capable of maintaining a vacuum degree in a column in high vacuum at a 10<SP>-8</SP>Pa scale such as, for example, a compact scanning electron microscope and the charged particle beam device having a plurality of columns. Furthermore, a compact SEM column to monitor a position of a probe of a prober device to directly measure electrical characteristics of a semiconductor can be easily built in. In addition, downsizing of an electron beam irradiation column of a mirror projection type electron beam inspection device for semiconductor element inspection becomes possible. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011165669(A) 申请公布日期 2011.08.25
申请号 JP20110066960 申请日期 2011.03.25
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KATAGIRI SOUICHI;OSHIMA TAKU;AGEMURA TOSHIHIDE;SATO MITSUGI;FURUKAWA TAKASHI
分类号 H01J37/29;G01N23/203;G01N23/225;H01J37/06;H01J37/18;H01L21/66 主分类号 H01J37/29
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