发明名称 |
BULK ACOUSTIC RESONATOR STRUCTURES COMPRISING A SINGLE MATERIAL ACOUSTIC COUPLING LAYER COMPRISING INHOMOGENEOUS ACOUSTIC PROPERTY |
摘要 |
In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.
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申请公布号 |
US2011204997(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US20100710640 |
申请日期 |
2010.02.23 |
申请人 |
AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. |
发明人 |
ELBRECHT LUEDER;THALHAMMER ROBERT |
分类号 |
H03H9/58 |
主分类号 |
H03H9/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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