APPARATUS AND METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT
摘要
The present invention relates to an apparatus for manufacturing an integrated circuit (10) having a thick film metal layer (14). A layer of metal paste (14) is applied via an application means (24) onto a heat-conducting substrate (12). The metal paste (14) includes metal particles of a predetermined size. An RF generator (16) selectively inductively couples RF energy (18) into the metal paste (14). The predetermined size of the metal particles of the metal paste (14) corresponds to a coupling frequency of the RF energy (18), for heating the metal particles. In this way the metal particles of the metal paste (14) are heated with only a small fraction of the power of conventional processes, and without the need to pre-sinter the metal paste (14).
申请公布号
WO2010109430(A3)
申请公布日期
2011.08.25
申请号
WO2010IB51295
申请日期
2010.03.24
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;DE WIJS, WILLEM-JAN, A.;VAN DE SANDE, MARCUS, J.