摘要 |
<p>A process for coating a substrate heated to a temperature below the condensation temperature of a semiconductor material at atmospheric pressure is disclosed, the process including the steps of mixing a mass of semiconductor material and a heated inert gas stream, vaporizing the controlled mass of semiconductor material within the inert gas to generate a sub-saturated fluid mixture, directing the sub-saturated fluid mixture at the substrate, wherein the substrate is at substantially atmospheric pressure, depositing a layer of the semiconductor material onto a surface of the substrate, extracting undeposited semiconductor material, and repeating the steps of generating, directing, depositing, and extracting, to minimize an amount of undeposited semiconductor material.</p> |
申请人 |
CALYXO GMBH;KORMANYOS, KENNETH, R.;REITER, NICHOLAS, A. |
发明人 |
KORMANYOS, KENNETH, R.;REITER, NICHOLAS, A. |