| 摘要 |
<p>Provided is a PIN diode which has a higher avalanche resistance and can be produced inexpensively. The PIN diode is provided with a semiconductor substrate (11), which comprises an N+ semiconductor layer (1) and an N- semiconductor layer (2), a P-type anode region (15), which is formed by the selective diffusion of impurities on the outer surface of the N- semiconductor layer (2), and an anode (17), which forms a continuous circuit with the anode region (15) via a contact region (17c) within the anode region (15). The anode region (15) has substantially rectangular outer edges such that the four sides are straight line parts (B2) and the four vertices thereof are curved line parts (B1). N-type non-diffusion corner regions (16) are formed extendibly along the curved line parts (B1) on the outside of the contact region (17c) in each of the four corners. Thus, when an avalanche current flows from a breakdown point on a curved line part (B1) and around the high resistance non-diffusion corner region (16), a voltage drop occurs along a curved line part (B1). As a result, the breakdown point can be shifted to a straight line part (B2).</p> |
